PE/CVD-Furnace

PE/CVD Furnace

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Product Description

The Plasma Enhanced Chemical Vapor Deposition (PE/CVD) furnace is a cutting-edge tool designed for the precise deposition of thin films and coatings in semiconductor and material science applications. Utilizing plasma to enhance the chemical vapor deposition process, this furnace enables the creation of high-quality films with excellent uniformity and adherence at lower temperatures compared to traditional CVD methods. Ideal for applications such as semiconductor fabrication, photovoltaic cell production, and advanced materials research, the PE/CVD furnace offers advanced control over film properties and deposition rates. With its sophisticated plasma generation and process control systems, it ensures high-performance results and reliability for demanding industrial and research environments.

CVD Furnace
Temperature1200°C, 1400°C, 1700°C, 1800°C
Tube dia and heating length sectionTube dia (40, 60, 80, 100mm), heating length section (205, 350, 440 mm)
Equipment Temprature ZoneSingle, double, three

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